Dual high side driver

• Freescale’s intelligent high side switches are designed to control a wide variety of loads in automotive and industrial systems. This presentation describes Freescale’s high side switch portfolio and roadmap, device features, considerations for their use, potential applications and . ST’s M “Enhanced” (ME) High-Side Drivers enrich the existing M family with 5 brand-new devices featuring extremely high current sensing precision and ultra-low voltage capability during the car cold cranking phase. Derived from ST’s proprietary VIPower® technology, these fully protected ME high-side switches have a R DS (ON. The latest series of high-side drivers, built on VIPower M technology, offer higher power density, greater accuracy in critical diagnostic and new protection www.doorway.ru series covers a wide spectrum of R DS(on) values (up to mΩ) and package options, ensuring design scalability. Additional features include: Configurable auto-restart or latch-off protection against hazardous conditions.

synchronous buck configuration. The floating high−side driver is capable of operating with supply voltages of up to 80 V. In the dual gate driver, the high side and low side each have independent inputs to allow maximum flexibility of input control signals in the application. The PWM input signal (high level) can be V, 5 V or up to VDD logic input to cover all possible applications. The bootstrap diode for the high−side driver bias supply is integrated in the chip. The. Universal: dual low-side, dual high-side or half-bridge driver; Operating temperature range –40 to +°C; Switching parameters: ns typical propagation delay; ns minimum pulse width; 5-ns maximum delay matching; 5-ns maximum pulse-width distortion; Common-mode transient immunity (CMTI) greater than V/ns; Surge immunity up to kV. In a high-side switch, shown on the right, the load is between ground and the P-channel MOSFET doing the switching. The low-side switches are convenient for driving LEDs, relays, motors etc. because you can generally driven them directly from a microcontroller's output, as long as the V G S value of the MOSFET is lower than the output voltage.

Low or high side switched loads with currents > 20A A dual chip solution in a package is the most optimized (cost) for such driving from Xenon. VNDSP. Dual high-side switch with dual Power MOSFET gate driver (bridge configuration). Features. □ 5V logic level compatible inputs. The shoot through protection mechanism is designed to prevent shoot through between high side and low side power MOSFETs. The RTB has tri-state. PWM input.